ASML and TSMC target a 12-inch photomask pilot line by 2031
The mask would double in width.
ASML and TSMC have started an industry initiative to move High NA extreme-ultraviolet lithography from 6-inch to 12-inch photomasks, the companies said Tuesday. They target a pilot line in 2031 and production readiness for advanced chips in 2033.
TSMC separately intends to begin high-volume manufacturing with High NA EUV in 2030, using the established 6-inch format first.
The larger masks are meant to improve scanner productivity, lower costs and remove constraints from joining multiple mask patterns. Those are targets. No 12-inch production capacity exists in the announcement, and the companies did not disclose a project cost.
